BCW61C
- Mfr.Part #
- BCW61C
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 32,341
- In Stock :
- 32,341
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 800ns
- JESD-609 Code :
- e3
- Base Part Number :
- BCW61
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Additional Feature :
- LOW NOISE
- Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 32V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transistor Type :
- PNP
- Datasheets
- BCW61C
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61C,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BCW61C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW61C,235 Applications
There are a lot of Nexperia USA Inc.
BCW61C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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