BCW61C
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- Mfr.Part #
- BCW61C
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 32,341
- In Stock ：
- 32,341
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 250mW
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- JESD-609 Code :
- e3
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 250mW
- Max Breakdown Voltage :
- 32V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCW61
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 32V
- Factory Lead Time :
- 4 Weeks
- Turn Off Time-Max (toff) :
- 800ns
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 32V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 32V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- LOW NOISE
- Datasheets
- BCW61C
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61C,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BCW61C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW61C,235 Applications
There are a lot of Nexperia USA Inc.
BCW61C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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