BCW61BMTF
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- Mfr.Part #
- BCW61BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23-3
- Stock
- 70,710
- In Stock ：
- 70,710
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 32V
- Current - Collector Cutoff (Max) :
- 20nA
- Collector Emitter Voltage (VCEO) :
- 32V
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Base Part Number :
- BCW61
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -32V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 2mA 5V
- Collector Emitter Saturation Voltage :
- -550mV
- Factory Lead Time :
- 2 Weeks
- Turn Off Time-Max (toff) :
- 800ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -32V
- Weight :
- 30mg
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- hFE Min :
- 140
- Max Breakdown Voltage :
- 32V
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 350mW
- Terminal Form :
- Gull wing
- Power Dissipation :
- 350mW
- Min Operating Temperature :
- -55°C
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Datasheets
- BCW61BMTF
PNP 20nA 1 Elements 3 Terminations PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61BMTF Overview
In this device, the DC current gain is 140 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -550mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW61BMTF Features
the DC current gain for this device is 140 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
BCW61BMTF Applications
There are a lot of ON Semiconductor
BCW61BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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