BCW61B,215
- Mfr.Part #
- BCW61B,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BCW61B - SMALL SIGNAL B
- Stock
- 414
- In Stock :
- 414
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Power - Max :
- 250mW
- VCEsat-Max :
- 0.55 V
- JESD-30 Code :
- R-PDSO-G3
- Turn Off Time-Max (toff) :
- 800ns
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.95
- Transistor Type :
- PNP
- Base Part Number :
- BCW61
- Number of Elements :
- 1
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Additional Feature :
- LOW NOISE
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- Turn On Time-Max (ton) :
- 150ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency - Transition :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCW61B,215

PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61B,215 Overview
This device has a DC current gain of 180 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.
BCW61B,215 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 100MHz
BCW61B,215 Applications
There are a lot of Nexperia USA Inc.
BCW61B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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