BCW61AE6327HTSA1
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- Mfr.Part #
- BCW61AE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 34,974
- In Stock ：
- 34,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 550mV
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 330mW
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -32V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Factory Lead Time :
- 26 Weeks
- Frequency - Transition :
- 250MHz
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 120
- Halogen Free :
- Not Halogen Free
- Current Rating :
- -100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 32V
- Number of Pins :
- 3
- Power - Max :
- 330mW
- Base Part Number :
- BCW61
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 250MHz
- Number of Elements :
- 1
- Datasheets
- BCW61AE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61AE6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BCW61AE6327HTSA1 Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BCW61AE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW61AE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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