BCW60FE6327
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- Mfr.Part #
- BCW60FE6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 16,907
- In Stock ：
- 16,907
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 330 mW
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 32 V
- Product Status :
- Active
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 100 mA
- Supplier Device Package :
- PG-SOT23-3-1
- Package :
- Bulk
- Frequency - Transition :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Current - Collector Cutoff (Max) :
- 20nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Datasheets
- BCW60FE6327
NPN 150°C (TJ) 20nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
BCW60FE6327 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package PG-SOT23-3-1 contains the product.The device has a 32 V maximal voltage - Collector Emitter Breakdown.
BCW60FE6327 Features
the DC current gain for this device is -
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the supplier device package of PG-SOT23-3-1
BCW60FE6327 Applications
There are a lot of Infineon Technologies
BCW60FE6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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