BC858AWT1
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- Mfr.Part #
- BC858AWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SC70-3
- Stock
- 4,733
- In Stock ：
- 4,733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -100mA
- Surface Mount :
- yes
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 90
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Number of Elements :
- 1
- Max Power Dissipation :
- 150mW
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC85**W
- Package / Case :
- SC-70, SOT-323
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -30V
- Published :
- 2005
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- -650mV
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Datasheets
- BC858AWT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858AWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858AWT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858AWT1G Applications
There are a lot of ON Semiconductor
BC858AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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