AT-42010

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Highest Frequency Band :

C B

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 35mA 8V

Transistor Type :

NPN

Operating Temperature :

200°C TJ

Peak Reflow Temperature (Cel) :

260

Package / Case :

4-SMD (100 mil)

Configuration :

Single

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Published :

2008

Frequency - Transition :

8GHz

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

1.9dB ~ 3dB @ 2GHz ~ 4GHz

JESD-609 Code :

e4

HTS Code :

8541.21.00.75

Terminal Position :

QUAD

Mounting Type :

Surface Mount

Terminal Finish :

Gold (Au)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

12V

JESD-30 Code :

S-CQMW-F4

Surface Mount :

yes

Gain :

10dB ~ 13.5dB

Number of Terminations :

4

Current - Collector (Ic) (Max) :

80mA

Power - Max :

600mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Packaging :

Bulk

Number of Elements :

1

Transition Frequency :

8000MHz

Power Dissipation-Max (Abs) :

0.6W

Case Connection :

Emitter

Terminal Form :

Flat