AT-41435G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

10dB ~ 18.5dB

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 8V

Operating Temperature :

150°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Power - Max :

500mW

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.40

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Configuration :

Single

Terminal Form :

Flat

Highest Frequency Band :

C B

Transition Frequency :

8000MHz

JESD-30 Code :

X-CXMW-F4

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 4GHz

Current - Collector (Ic) (Max) :

60mA

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V

JESD-609 Code :

e3

Terminal Position :

UNSPECIFIED

Frequency - Transition :

8GHz

Surface Mount :

yes

Published :

2002

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Power Dissipation-Max (Abs) :

0.5W

Package / Case :

4-SMD (35 micro-X)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)