AT-31011-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

6 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Gain Bandwidth Product :

10 GHz

Max Collector Current :

16mA

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 1mA 2.7V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Contact Plating :

Gold

Power Dissipation :

150mW

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

5.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Transition Frequency :

10000MHz

Operating Temperature :

150°C TJ

Max Power Dissipation :

150mW

Continuous Collector Current :

16mA

Voltage - Rated DC :

5.5V

Number of Pins :

4

Number of Elements :

1

Frequency :

30GHz

Current Rating :

16mA

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

1.5V

Gain :

11dB ~ 13dB

Package / Case :

TO-253-4, TO-253AA

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

11V

Configuration :

Single

Collector Emitter Breakdown Voltage :

5.5V

Terminal Position :

Dual

Number of Terminations :

4