APTC90DAM60T1G
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- Mfr.Part #
- APTC90DAM60T1G
- Manufacturer
- Microsemi
- Package / Case
- SP1
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 59A SP1
- Stock
- 45,920
- In Stock ：
- 45,920
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 462W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Chassis Mount
- FET Feature :
- Super Junction
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.06Ohm
- Transistor Element Material :
- SILICON
- Packaging :
- Tray
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 59A Tc
- Terminal Position :
- UPPER
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 52A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Pin Count :
- 12
- Number of Pins :
- 1
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 900V
- Continuous Drain Current (ID) :
- 59A
- Published :
- 2012
- Fall Time (Typ) :
- 25 ns
- Series :
- CoolMOS™
- Case Connection :
- Isolated
- Rise Time :
- 20ns
- Mount :
- Chassis Mount, Screw
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 100V
- Package / Case :
- SP1
- Operating Temperature :
- -40°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 900V
- Turn On Delay Time :
- 70 ns
- Factory Lead Time :
- 22 Weeks
- Vgs(th) (Max) @ Id :
- 3.5V @ 6mA
- Number of Terminations :
- 10
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 400 ns
- Datasheets
- APTC90DAM60T1G
N-Channel Tray 60m Ω @ 52A, 10V ±20V 13600pF @ 100V 540nC @ 10V 900V SP1
APTC90DAM60T1G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13600pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 59A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 400 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 70 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APTC90DAM60T1G Features
a continuous drain current (ID) of 59A
the turn-off delay time is 400 ns
a 900V drain to source voltage (Vdss)
APTC90DAM60T1G Applications
There are a lot of Microsemi Corporation
APTC90DAM60T1G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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