APTC90DAM60CT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Mount :

Chassis Mount, Screw

Number of Terminations :

10

Turn On Delay Time :

70 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Power Dissipation-Max :

462W Tc

Drain to Source Voltage (Vdss) :

900V

Transistor Element Material :

SILICON

Series :

CoolMOS™

Current - Continuous Drain (Id) @ 25°C :

59A Tc

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

60m Ω @ 52A, 10V

Rise Time :

20ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

400 ns

Published :

1997

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Packaging :

Bulk

FET Type :

N-Channel

Terminal Form :

UNSPECIFIED

Drain-source On Resistance-Max :

0.06Ohm

Package / Case :

SP1

Fall Time (Typ) :

25 ns

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Pin Count :

12

Case Connection :

Isolated

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

13600pF @ 100V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 6mA

Continuous Drain Current (ID) :

59A

Terminal Position :

UPPER

Number of Pins :

1

FET Feature :

Super Junction

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

900V

Mounting Type :

Chassis Mount

ECCN Code :

EAR99