APTC80SK15T1G
- Mfr.Part #
- APTC80SK15T1G
- Manufacturer
- Microsemi
- Package / Case
- SP1
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 28A SP1
- Stock
- 36,435
- In Stock :
- 36,435
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.9V @ 2mA
- Drain to Source Voltage (Vdss) :
- 800V
- Package / Case :
- SP1
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4507pF @ 25V
- Number of Pins :
- 1
- Published :
- 2007
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 14A, 10V
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Mount :
- Chassis Mount, Screw
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 277W
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Continuous Drain Current (ID) :
- 28A
- Terminal Form :
- UNSPECIFIED
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Operating Temperature :
- -40°C~150°C TJ
- Pin Count :
- 12
- Number of Terminations :
- 12
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 277W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 800V
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- RoHS Status :
- RoHS Compliant
- Datasheets
- APTC80SK15T1G
N-Channel Bulk 150m Ω @ 14A, 10V ±30V 4507pF @ 25V 180nC @ 10V 800V SP1
APTC80SK15T1G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 670 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4507pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 28A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 800V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APTC80SK15T1G Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 28A
a 800V drain to source voltage (Vdss)
APTC80SK15T1G Applications
There are a lot of Microsemi Corporation
APTC80SK15T1G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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