APTC80DA15T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

12

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±30V

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

28A

Published :

2007

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SP1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

277W Tc

Power Dissipation :

277W

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Number of Pins :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

670 mJ

Mount :

Chassis Mount, Screw

Qualification Status :

Not Qualified

Terminal Position :

UPPER

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

JESD-609 Code :

e1

Number of Terminations :

12

Terminal Form :

UNSPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

3.9V @ 2mA