APTC60SKM24T1G
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- Mfr.Part #
- APTC60SKM24T1G
- Manufacturer
- Microchip Technology
- Package / Case
- SP1
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 95A SP1
- Stock
- 27,178
- In Stock ：
- 27,178
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Number of Terminations :
- 12
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- RoHS Compliant
- Mount :
- Chassis Mount, Screw
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 1
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 100 ns
- Package / Case :
- SP1
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.024Ohm
- Vgs (Max) :
- ±20V
- Series :
- CoolMOS™
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 95A Tc
- Operating Temperature :
- -40°C~150°C TJ
- Turn On Delay Time :
- 21 ns
- Packaging :
- Bulk
- Rise Time :
- 30ns
- Pulsed Drain Current-Max (IDM) :
- 260A
- Vgs(th) (Max) @ Id :
- 3.9V @ 5mA
- Drain to Source Voltage (Vdss) :
- 600V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Transistor Application :
- Chopper
- Power Dissipation-Max :
- 462W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 45 ns
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 47.5A, 10V
- Pin Count :
- 12
- Continuous Drain Current (ID) :
- 95A
- Factory Lead Time :
- 36 Weeks
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 600V
- Radiation Hardening :
- No
- Datasheets
- APTC60SKM24T1G
N-Channel Bulk 24m Ω @ 47.5A, 10V ±20V 14400pF @ 25V 300nC @ 10V 600V SP1
APTC60SKM24T1G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 14400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 95A amps.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 260A.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APTC60SKM24T1G Features
a continuous drain current (ID) of 95A
the turn-off delay time is 100 ns
based on its rated peak drain current 260A.
a 600V drain to source voltage (Vdss)
APTC60SKM24T1G Applications
There are a lot of Microsemi Corporation
APTC60SKM24T1G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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