APTC60DAM35T1G

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Mfr.Part #
APTC60DAM35T1G
Manufacturer
Microsemi
Package / Case
SP1
Datasheet
Download
Description
MOSFET N-CH 600V 72A SP1
Stock
26,953
In Stock :
26,953

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
416W
Mounting Type :
Chassis Mount
Power Dissipation-Max :
416W Tc
Drain to Source Voltage (Vdss) :
600V
FET Type :
N-Channel
Min Operating Temperature :
-40°C
Supplier Device Package :
SP1
Continuous Drain Current (ID) :
72A
Max Operating Temperature :
150°C
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Packaging :
Bulk
Published :
2007
Number of Pins :
1
Vgs(th) (Max) @ Id :
3.9V @ 5.4mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
SP1
Input Capacitance :
14nF
Number of Elements :
1
Mount :
Chassis Mount, Screw
Rds On (Max) @ Id, Vgs :
35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 25V
Rds On Max :
35 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
518nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Operating Temperature :
-40°C~150°C TJ
RoHS Status :
RoHS Compliant
Datasheets
APTC60DAM35T1G
Introducing Transistors - FETs, MOSFETs - Single Microsemi APTC60DAM35T1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Pins:1, Package / Case:SP1, Operating Temperature:-40°C~150°C TJ, APTC60DAM35T1G pinout, APTC60DAM35T1G datasheet PDF, APTC60DAM35T1G amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi APTC60DAM35T1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 35mOhm @ 72A, 10V ±20V 14000pF @ 25V 518nC @ 10V 600V SP1

APTC60DAM35T1G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 14000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 72A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

APTC60DAM35T1G Features


a continuous drain current (ID) of 72A
a 600V drain to source voltage (Vdss)


APTC60DAM35T1G Applications


There are a lot of Microsemi Corporation
APTC60DAM35T1G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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