APTC60DAM24T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.024Ohm

Transistor Element Material :

SILICON

Number of Terminations :

12

Additional Feature :

AVALANCHE RATED

Case Connection :

Isolated

Pbfree Code :

yes

Packaging :

Bulk

Continuous Drain Current (ID) :

95A

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

1

Rise Time :

30ns

Turn On Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 47.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Vgs(th) (Max) @ Id :

3.9V @ 5mA

Radiation Hardening :

No

JESD-609 Code :

e1

Published :

2012

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Pin Count :

12

Terminal Position :

UPPER

Number of Elements :

1

Package / Case :

SP1

ECCN Code :

EAR99

Terminal Finish :

TIN SILVER COPPER

Mounting Type :

Chassis Mount

Factory Lead Time :

22 Weeks

Power Dissipation-Max :

462W Tc

Drain to Source Voltage (Vdss) :

600V

Mount :

Chassis Mount, Screw

Transistor Application :

SWITCHING

Fall Time (Typ) :

45 ns

Pulsed Drain Current-Max (IDM) :

260A

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Turn-Off Delay Time :

100 ns

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V