APT64GA90LD30
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- Mfr.Part #
- APT64GA90LD30
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 900V 117A 500W TO-264
- Stock
- 38,757
- In Stock ：
- 38,757
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge :
- 162nC
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Emitter Breakdown Voltage :
- 900V
- Input Type :
- Standard
- Width :
- 20.5mm
- Factory Lead Time :
- 29 Weeks
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Weight :
- 10.6g
- Package / Case :
- TO-264-3, TO-264AA
- Length :
- 26.49mm
- Collector Emitter Voltage (VCEO) :
- 900V
- Transistor Element Material :
- SILICON
- Transistor Application :
- POWER CONTROL
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Max Power Dissipation :
- 500W
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn Off Time-Nom (toff) :
- 352 ns
- Max Collector Current :
- 117A
- Mounting Type :
- Through Hole
- Test Condition :
- 600V, 38A, 4.7 Ω, 15V
- Height :
- 5.21mm
- JESD-609 Code :
- e1
- Turn On Time :
- 44 ns
- Switching Energy :
- 1192μJ (on), 1088μJ (off)
- ECCN Code :
- EAR99
- Additional Feature :
- LOW CONDUCTION LOSS
- Series :
- POWER MOS 8™
- IGBT Type :
- PT
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 38A
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- 18ns/131ns
- Pin Count :
- 3
- Published :
- 1999
- Packaging :
- Tube
- Continuous Collector Current :
- 117A
- Current - Collector Pulsed (Icm) :
- 193A
- Datasheets
- APT64GA90LD30
APT64GA90LD30 datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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