APT6013LLLG
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- Mfr.Part #
- APT6013LLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 43A TO264
- Stock
- 3,382
- In Stock ：
- 3,382
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 565W
- Published :
- 1997
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current Rating :
- 43A
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 21.5A, 10V
- Rise Time :
- 14ns
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Terminal Finish :
- TIN SILVER COPPER
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Series :
- POWER MOS 7®
- Turn-Off Delay Time :
- 27 ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Turn On Delay Time :
- 11 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 8 ns
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 43A
- Pin Count :
- 3
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 565W Tc
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-264-3, TO-264AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 5630pF @ 25V
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Datasheets
- APT6013LLLG
N-Channel Tube 130m Ω @ 21.5A, 10V ±30V 5630pF @ 25V 130nC @ 10V TO-264-3, TO-264AA
APT6013LLLG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5630pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 27 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT6013LLLG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 27 ns
APT6013LLLG Applications
There are a lot of Microsemi Corporation
APT6013LLLG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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