APT6013LLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-264-3, TO-264AA

RoHS Status :

RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation :

565W

Number of Terminations :

3

Fall Time (Typ) :

8 ns

Continuous Drain Current (ID) :

43A

Avalanche Energy Rating (Eas) :

2500 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Rise Time :

14ns

Series :

POWER MOS 7®

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Voltage - Rated DC :

600V

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

5630pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Lead Free :

Lead Free

Turn On Delay Time :

11 ns

Terminal Position :

Single

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

130m Ω @ 21.5A, 10V

Case Connection :

DRAIN

Packaging :

Tube

Turn-Off Delay Time :

27 ns

Current Rating :

43A

Transistor Application :

SWITCHING

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation-Max :

565W Tc

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V