APT5F100K

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1409pF @ 25V

Configuration :

Single

Drain Current-Max (Abs) (ID) :

32A

Power Dissipation :

225W

Published :

2009

Vgs(th) (Max) @ Id :

5V @ 500µA

Turn-Off Delay Time :

72 ns

Pbfree Code :

yes

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Number of Terminations :

3

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 3A, 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Number of Elements :

1

Continuous Drain Current (ID) :

5A

JESD-609 Code :

e1

Power Dissipation-Max :

225W Tc

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Packaging :

Tube

Terminal Finish :

TIN SILVER COPPER

Mount :

Through Hole

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

20A

Mounting Type :

Through Hole

Rise Time :

21ns

FET Type :

N-Channel

Fall Time (Typ) :

21 ns

Current Rating :

5A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

1kV

Terminal Position :

Single

Turn On Delay Time :

23 ns

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Pin Count :

3

Drain to Source Voltage (Vdss) :

1000V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

2.9Ohm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Series :

POWER MOS 8™

Operating Mode :

ENHANCEMENT MODE