APT58M80J
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- Mfr.Part #
- APT58M80J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 60A SOT227
- Stock
- 32,051
- In Stock ：
- 32,051
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 17550pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Packaging :
- Tube
- Terminal Form :
- UNSPECIFIED
- Avalanche Energy Rating (Eas) :
- 3725 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 800V
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Case Connection :
- Isolated
- Turn-Off Delay Time :
- 435 ns
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Current Rating :
- 58A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 100 ns
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 1997
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 325A
- Mount :
- Chassis Mount, Screw
- Mounting Type :
- Chassis Mount
- Fall Time (Typ) :
- 125 ns
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 570nC @ 10V
- Power Dissipation-Max :
- 960W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 43A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-227-4, miniBLOC
- Rise Time :
- 145ns
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 4
- Continuous Drain Current (ID) :
- 60A
- Power Dissipation :
- 960W
- Factory Lead Time :
- 16 Weeks
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- UPPER
- Datasheets
- APT58M80J
N-Channel Tube 110m Ω @ 43A, 10V ±30V 17550pF @ 25V 570nC @ 10V SOT-227-4, miniBLOC
APT58M80J Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3725 mJ.The maximum input capacitance of this device is 17550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 435 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 325A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 100 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT58M80J Features
the avalanche energy rating (Eas) is 3725 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 435 ns
based on its rated peak drain current 325A.
APT58M80J Applications
There are a lot of Microsemi Corporation
APT58M80J applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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