APT58M50JU3
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- Mfr.Part #
- APT58M50JU3
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A SOT227
- Stock
- 48,216
- In Stock ：
- 48,216
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 340nC @ 10V
- Mounting Type :
- Chassis Mount
- Number of Channels :
- 1
- Vgs (Max) :
- ±30V
- Published :
- 2012
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 58A
- Radiation Hardening :
- No
- Operating Temperature :
- -40°C~150°C TJ
- Factory Lead Time :
- 36 Weeks
- Packaging :
- Bulk
- Fall Time (Typ) :
- 50 ns
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 42A, 10V
- Series :
- POWER MOS 8™
- Width :
- 25.4mm
- Element Configuration :
- Single
- Mount :
- Chassis Mount, Screw
- Number of Pins :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Height :
- 9.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Weight :
- 30.000004g
- Rise Time :
- 70ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Turn-Off Delay Time :
- 155 ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 500V
- Turn On Delay Time :
- 60 ns
- Power Dissipation-Max :
- 543W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 38.2mm
- RoHS Status :
- RoHS Compliant
- Datasheets
- APT58M50JU3
N-Channel Bulk 65m Ω @ 42A, 10V ±30V 10800pF @ 25V 340nC @ 10V SOT-227-4, miniBLOC
APT58M50JU3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 58A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT58M50JU3 Features
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 155 ns
APT58M50JU3 Applications
There are a lot of Microsemi Corporation
APT58M50JU3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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