APT58M50JCU3

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

58A

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Case Connection :

Isolated

Turn On Delay Time :

60 ns

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

155 ns

Package / Case :

SOT-227-4, miniBLOC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

65m Ω @ 42A, 10V

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.065Ohm

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation-Max :

543W Tc

Series :

POWER MOS 8™

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Rise Time :

70ns

Terminal Position :

UPPER

Vgs (Max) :

±30V

Radiation Hardening :

No

Number of Elements :

1

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

50 ns

Packaging :

Bulk

Number of Pins :

4

DS Breakdown Voltage-Min :

500V

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

4

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

270A