APT58M50JCU2
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- Mfr.Part #
- APT58M50JCU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A SOT227
- Stock
- 38,132
- In Stock ：
- 38,132
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -40°C~150°C TJ
- Number of Pins :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Fall Time (Typ) :
- 50 ns
- Number of Terminations :
- 4
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 42A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 340nC @ 10V
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 58A
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.065Ohm
- Series :
- POWER MOS 8™
- Pulsed Drain Current-Max (IDM) :
- 270A
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- ECCN Code :
- EAR99
- Terminal Form :
- UNSPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 543W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Mount :
- Chassis Mount, Screw
- FET Type :
- N-Channel
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- DS Breakdown Voltage-Min :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Pin Count :
- 4
- Published :
- 1997
- Turn On Delay Time :
- 60 ns
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Package / Case :
- SOT-227-4, miniBLOC
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 36 Weeks
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 155 ns
- Rise Time :
- 70ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- APT58M50JCU2
N-Channel Bulk 65m Ω @ 42A, 10V ±30V 10800pF @ 25V 340nC @ 10V 500V SOT-227-4, miniBLOC
APT58M50JCU2 Overview
A device's maximum input capacitance is 10800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 270A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT58M50JCU2 Features
a continuous drain current (ID) of 58A
the turn-off delay time is 155 ns
based on its rated peak drain current 270A.
a 500V drain to source voltage (Vdss)
APT58M50JCU2 Applications
There are a lot of Microsemi Corporation
APT58M50JCU2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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