APT58M50JCU2
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- Mfr.Part #
- APT58M50JCU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A SOT227
- Stock
- 38,132
- In Stock ：
- 38,132
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 58A
- Rise Time :
- 70ns
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 42A, 10V
- Operating Temperature :
- -40°C~150°C TJ
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Factory Lead Time :
- 36 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Pulsed Drain Current-Max (IDM) :
- 270A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Turn On Delay Time :
- 60 ns
- Pin Count :
- 4
- Number of Terminations :
- 4
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 543W Tc
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Packaging :
- Bulk
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount, Screw
- Turn-Off Delay Time :
- 155 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Published :
- 1997
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.065Ohm
- Series :
- POWER MOS 8™
- DS Breakdown Voltage-Min :
- 500V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 50 ns
- Number of Pins :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 340nC @ 10V
- Terminal Position :
- UPPER
- Datasheets
- APT58M50JCU2
N-Channel Bulk 65m Ω @ 42A, 10V ±30V 10800pF @ 25V 340nC @ 10V 500V SOT-227-4, miniBLOC
APT58M50JCU2 Overview
A device's maximum input capacitance is 10800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 270A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT58M50JCU2 Features
a continuous drain current (ID) of 58A
the turn-off delay time is 155 ns
based on its rated peak drain current 270A.
a 500V drain to source voltage (Vdss)
APT58M50JCU2 Applications
There are a lot of Microsemi Corporation
APT58M50JCU2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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