APT58M50JCU2
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- Mfr.Part #
- APT58M50JCU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A SOT227
- Stock
- 38,132
- In Stock ：
- 38,132
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 1997
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 155 ns
- Terminal Form :
- UNSPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10800pF @ 25V
- Continuous Drain Current (ID) :
- 58A
- Terminal Position :
- UPPER
- Rise Time :
- 70ns
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 500V
- Factory Lead Time :
- 36 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 0.065Ohm
- Power Dissipation-Max :
- 543W Tc
- Number of Terminations :
- 4
- Pulsed Drain Current-Max (IDM) :
- 270A
- Fall Time (Typ) :
- 50 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 42A, 10V
- Series :
- POWER MOS 8™
- Number of Elements :
- 1
- Turn On Delay Time :
- 60 ns
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Operating Temperature :
- -40°C~150°C TJ
- Mount :
- Chassis Mount, Screw
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 340nC @ 10V
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-227-4, miniBLOC
- ECCN Code :
- EAR99
- Mounting Type :
- Chassis Mount
- Datasheets
- APT58M50JCU2
N-Channel Bulk 65m Ω @ 42A, 10V ±30V 10800pF @ 25V 340nC @ 10V 500V SOT-227-4, miniBLOC
APT58M50JCU2 Overview
A device's maximum input capacitance is 10800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 270A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT58M50JCU2 Features
a continuous drain current (ID) of 58A
the turn-off delay time is 155 ns
based on its rated peak drain current 270A.
a 500V drain to source voltage (Vdss)
APT58M50JCU2 Applications
There are a lot of Microsemi Corporation
APT58M50JCU2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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