APT56M60B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3 Variant

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Series :

POWER MOS 8™

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Width :

16.26mm

Number of Elements :

1

Current Rating :

56A

Rds On (Max) @ Id, Vgs :

130m Ω @ 28A, 10V

Voltage - Rated DC :

600V

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

1040W Tc

Turn-Off Delay Time :

190 ns

JESD-609 Code :

e3

Height :

5.31mm

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Packaging :

Tube

Vgs (Max) :

±30V

Turn On Delay Time :

65 ns

Terminal Finish :

PURE MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Length :

21.46mm

Mount :

Through Hole

Power Dissipation :

1.04kW

Mounting Type :

Through Hole

Fall Time (Typ) :

60 ns

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Factory Lead Time :

19 Weeks

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

60A

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Rise Time :

75ns

Terminal Position :

Single

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

3