APT56M60B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

3

FET Type :

N-Channel

Power Dissipation :

1.04kW

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Position :

Single

Rise Time :

75ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

65 ns

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Voltage - Rated DC :

600V

Package / Case :

TO-247-3 Variant

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Terminal Finish :

PURE MATTE TIN

Continuous Drain Current (ID) :

60A

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Current Rating :

56A

Pin Count :

3

Width :

16.26mm

Series :

POWER MOS 8™

Fall Time (Typ) :

60 ns

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

190 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Published :

1997

Power Dissipation-Max :

1040W Tc

Rds On (Max) @ Id, Vgs :

130m Ω @ 28A, 10V

Pbfree Code :

yes

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

19 Weeks

Number of Elements :

1

Length :

21.46mm

Height :

5.31mm

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V