APT56M50B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Terminal Finish :

PURE MATTE TIN

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

8800pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

56A

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Width :

16.26mm

Number of Terminations :

3

Vgs (Max) :

±30V

Pbfree Code :

yes

Voltage - Rated DC :

500V

Packaging :

Tube

Lead Free :

Lead Free

Package / Case :

TO-247-3 Variant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Turn On Delay Time :

38 ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Height :

5.31mm

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Radiation Hardening :

No

Case Connection :

DRAIN

Power Dissipation-Max :

780W Tc

Power Dissipation :

780W

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

100m Ω @ 28A, 10V

Terminal Position :

Single

Drain to Source Breakdown Voltage :

500V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

56A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Elements :

1

Length :

21.46mm

Turn-Off Delay Time :

100 ns

Rise Time :

45ns

Fall Time (Typ) :

33 ns

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant