APT56F60L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Transistor Application :

SWITCHING

Turn On Delay Time :

65 ns

JESD-609 Code :

e3

Fall Time (Typ) :

60 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Transistor Element Material :

SILICON

Factory Lead Time :

23 Weeks

Terminal Finish :

PURE MATTE TIN

Drain Current-Max (Abs) (ID) :

56A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Radiation Hardening :

No

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Pbfree Code :

yes

Turn-Off Delay Time :

190 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Published :

1997

Drain to Source Voltage (Vdss) :

600V

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

30V

Rise Time :

75ns

Continuous Drain Current (ID) :

60A

Power Dissipation-Max :

1040W Tc

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Rds On (Max) @ Id, Vgs :

110m Ω @ 28A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Series :

POWER MOS 8™

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Pin Count :

3

Power Dissipation :

1.04kW