APT56F60L
- Mfr.Part #
- APT56F60L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 60A TO264
- Stock
- 18,264
- In Stock :
- 18,264
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 23 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 11300pF @ 25V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 28A, 10V
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- Power Dissipation :
- 1.04kW
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 60A
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 190 ns
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 600V
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 65 ns
- Package / Case :
- TO-264-3, TO-264AA
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 60 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Series :
- POWER MOS 8™
- Rise Time :
- 75ns
- Published :
- 1997
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 56A
- Power Dissipation-Max :
- 1040W Tc
- Pbfree Code :
- yes
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- PURE MATTE TIN
- Datasheets
- APT56F60L
N-Channel Tube 110m Ω @ 28A, 10V ±30V 11300pF @ 25V 280nC @ 10V 600V TO-264-3, TO-264AA
APT56F60L Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.A device can conduct a maximum continuous current of [56A] according to its drain current.It is [190 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 65 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT56F60L Features
a continuous drain current (ID) of 60A
the turn-off delay time is 190 ns
a 600V drain to source voltage (Vdss)
APT56F60L Applications
There are a lot of Microsemi Corporation
APT56F60L applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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