APT56F60B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1040W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Number of Pins :

3

Terminal Position :

Single

Mounting Type :

Through Hole

Factory Lead Time :

22 Weeks

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

190 ns

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.04kW

Terminal Finish :

PURE MATTE TIN

Packaging :

Tube

Vgs (Max) :

±30V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

56A

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Package / Case :

TO-247-3 Variant

Rise Time :

75ns

Mount :

Through Hole

JEDEC-95 Code :

TO-247AB

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Rds On (Max) @ Id, Vgs :

110m Ω @ 28A, 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Series :

POWER MOS 8™

Number of Terminations :

3

Case Connection :

DRAIN

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

60A

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Turn On Delay Time :

65 ns

RoHS Status :

RoHS Compliant