APT56F50L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Pbfree Code :

yes

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 28A, 10V

Turn-Off Delay Time :

100 ns

Drain to Source Voltage (Vdss) :

500V

Published :

1997

FET Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

780W Tc

Factory Lead Time :

24 Weeks

Packaging :

Tube

Continuous Drain Current (ID) :

56A

Input Capacitance (Ciss) (Max) @ Vds :

8800pF @ 25V

Package / Case :

TO-264-3, TO-264AA

Transistor Element Material :

SILICON

Series :

POWER MOS 8™

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Radiation Hardening :

No

Power Dissipation :

780W

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Terminal Finish :

PURE MATTE TIN

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

38 ns

Fall Time (Typ) :

33 ns

DS Breakdown Voltage-Min :

500V

Mount :

Through Hole

Rise Time :

45ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Additional Feature :

AVALANCHE RATED