APT5518BFLLG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.18ohm

Packaging :

Tube

Continuous Drain Current (ID) :

31A

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-247AD

Series :

POWER MOS 7®

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1300 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

550V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

124A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Pin Count :

3

Pbfree Code :

yes

Qualification Status :

Not Qualified

Power Dissipation-Max :

403W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Published :

2003

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

180m Ω @ 15.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3286pF @ 25V

Vgs (Max) :

±30V

Current Rating :

31A