APT5510JFLL
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- Mfr.Part #
- APT5510JFLL
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 44A ISOTOP
- Stock
- 10,691
- In Stock ：
- 10,691
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 550V
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 5823pF @ 25V
- Continuous Drain Current (ID) :
- 44A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pulsed Drain Current-Max (IDM) :
- 176A
- Terminal Form :
- UNSPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Number of Terminations :
- 4
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 22A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Chassis Mount
- Drain-source On Resistance-Max :
- 0.1Ohm
- Package / Case :
- SOT-227-4, miniBLOC
- Additional Feature :
- UL RECOGNIZED
- JESD-609 Code :
- e1
- Current Rating :
- 44A
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PUFM-X4
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Chassis Mount
- FET Type :
- N-Channel
- Series :
- POWER MOS 7®
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Published :
- 2003
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Power Dissipation-Max :
- 463W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Terminal Position :
- UPPER
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Datasheets
- APT5510JFLL
N-Channel Tube 100m Ω @ 22A, 10V ±30V 5823pF @ 25V 124nC @ 10V SOT-227-4, miniBLOC
APT5510JFLL Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5823pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 176A.By using drive voltage (10V), this device helps reduce its overall power consumption.
APT5510JFLL Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
based on its rated peak drain current 176A.
APT5510JFLL Applications
There are a lot of Microsemi Corporation
APT5510JFLL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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