APT53N60BC6

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

70m Ω @ 25.8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

Series :

CoolMOS™

Terminal Position :

Single

Published :

1997

Transistor Application :

SWITCHING

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Vgs(th) (Max) @ Id :

3.5V @ 1.72mA

Number of Elements :

1

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1135 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

417W Tc

Pulsed Drain Current-Max (IDM) :

159A

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.07Ohm

Mounting Type :

Through Hole

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

53A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

600V

Packaging :

Tube

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4020pF @ 25V

Factory Lead Time :

24 Weeks

Vgs (Max) :

±20V