APT51F50J

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

23 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Case Connection :

Isolated

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

480W Tc

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Pulsed Drain Current-Max (IDM) :

230A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Published :

1997

Transistor Application :

SWITCHING

Pin Count :

4

Turn On Delay Time :

45 ns

Power Dissipation :

480W

Turn-Off Delay Time :

120 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Fall Time (Typ) :

39 ns

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

11600pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Package / Case :

SOT-227-4, miniBLOC

Drain-source On Resistance-Max :

0.075Ohm

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Continuous Drain Current (ID) :

51A

Rds On (Max) @ Id, Vgs :

75m Ω @ 37A, 10V

Vgs (Max) :

±30V

FET Type :

N-Channel

Radiation Hardening :

No

Number of Pins :

4

Rise Time :

55ns