APT50M80B2VRG
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- Mfr.Part #
- APT50M80B2VRG
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A T-MAX
- Stock
- 23,731
- In Stock ：
- 23,731
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 64 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 23 ns
- Number of Pins :
- 3
- Packaging :
- Tube
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 423nC @ 10V
- Package / Case :
- TO-247-3 Variant
- JESD-609 Code :
- e1
- Rise Time :
- 25ns
- Number of Terminations :
- 3
- Power Dissipation :
- 625W
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Voltage - Rated DC :
- 500V
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 58A
- Series :
- POWER MOS V®
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 29A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Terminal Position :
- Single
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 8797pF @ 25V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Current Rating :
- 58A
- Transistor Application :
- SWITCHING
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 14 ns
- Published :
- 2012
- Drain-source On Resistance-Max :
- 0.08Ohm
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Datasheets
- APT50M80B2VRG
N-Channel Tube 80m Ω @ 29A, 10V 8797pF @ 25V 423nC @ 10V TO-247-3 Variant
APT50M80B2VRG Overview
A device's maximum input capacitance is 8797pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 64 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT50M80B2VRG Features
a continuous drain current (ID) of 58A
the turn-off delay time is 64 ns
APT50M80B2VRG Applications
There are a lot of Microsemi Corporation
APT50M80B2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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