APT50M80B2VRG
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- Mfr.Part #
- APT50M80B2VRG
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A T-MAX
- Stock
- 23,731
- In Stock ：
- 23,731
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE
- Case Connection :
- DRAIN
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 64 ns
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 500V
- Number of Elements :
- 1
- Published :
- 2012
- Continuous Drain Current (ID) :
- 58A
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 29A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 625W
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 423nC @ 10V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 23 ns
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Rise Time :
- 25ns
- Pin Count :
- 3
- Packaging :
- Tube
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- POWER MOS V®
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 8797pF @ 25V
- Drain-source On Resistance-Max :
- 0.08Ohm
- Current Rating :
- 58A
- Turn On Delay Time :
- 14 ns
- Package / Case :
- TO-247-3 Variant
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Datasheets
- APT50M80B2VRG
N-Channel Tube 80m Ω @ 29A, 10V 8797pF @ 25V 423nC @ 10V TO-247-3 Variant
APT50M80B2VRG Overview
A device's maximum input capacitance is 8797pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 58A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 64 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT50M80B2VRG Features
a continuous drain current (ID) of 58A
the turn-off delay time is 64 ns
APT50M80B2VRG Applications
There are a lot of Microsemi Corporation
APT50M80B2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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