APT50M75JLLU2
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- Mfr.Part #
- APT50M75JLLU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 51A SOT227
- Stock
- 47,828
- In Stock ：
- 47,828
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 25.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Published :
- 2006
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- DS Breakdown Voltage-Min :
- 500V
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 21 ns
- Pin Count :
- 4
- Width :
- 25.4mm
- Resistance :
- 75mOhm
- Power Dissipation :
- 290W
- Height :
- 9.6mm
- Terminal Position :
- UPPER
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 36 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 4
- Packaging :
- Bulk
- Package / Case :
- SOT-227-4, miniBLOC
- Input Capacitance (Ciss) (Max) @ Vds :
- 5590pF @ 25V
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 290W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Series :
- POWER MOS 7®
- Terminal Form :
- UNSPECIFIED
- Fall Time (Typ) :
- 5 ns
- Continuous Drain Current (ID) :
- 51A
- ECCN Code :
- EAR99
- Weight :
- 30.000004g
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Additional Feature :
- AVALANCHE RATED
- Length :
- 38.2mm
- Turn On Delay Time :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Chassis Mount, Screw
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 20ns
- Number of Terminations :
- 4
- Vgs (Max) :
- ±30V
- Datasheets
- APT50M75JLLU2
N-Channel Bulk 75m Ω @ 25.5A, 10V ±30V 5590pF @ 25V 123nC @ 10V 500V SOT-227-4, miniBLOC
APT50M75JLLU2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5590pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 51A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 21 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APT50M75JLLU2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 51A
the turn-off delay time is 21 ns
a 500V drain to source voltage (Vdss)
APT50M75JLLU2 Applications
There are a lot of Microsemi Corporation
APT50M75JLLU2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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