APT50M75JLL
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- Mfr.Part #
- APT50M75JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 51A ISOTOP
- Stock
- 2,732
- In Stock ：
- 2,732
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 51A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5590pF @ 25V
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.075Ohm
- Fall Time (Typ) :
- 5 ns
- Factory Lead Time :
- 36 Weeks
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Terminal Form :
- UNSPECIFIED
- Turn-Off Delay Time :
- 21 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 20ns
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 25.5A, 10V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2006
- Turn On Delay Time :
- 10 ns
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Package / Case :
- SOT-227-4, miniBLOC
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Mount :
- Chassis Mount, Screw
- DS Breakdown Voltage-Min :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Bulk
- Case Connection :
- Isolated
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 290W Tc
- Power Dissipation :
- 290W
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Datasheets
- APT50M75JLL
N-Channel Bulk 75m Ω @ 25.5A, 10V ±30V 5590pF @ 25V 123nC @ 10V 500V SOT-227-4, miniBLOC
APT50M75JLLU3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5590pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APT50M75JLLU3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 51A
the turn-off delay time is 21 ns
a 500V drain to source voltage (Vdss)
APT50M75JLLU3 Applications
There are a lot of Microsemi Corporation
APT50M75JLLU3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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