APT50M65LLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

FET Type :

N-Channel

Turn-Off Delay Time :

29 ns

Case Connection :

DRAIN

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Terminations :

3

Lead Free :

Lead Free

Number of Elements :

1

JESD-609 Code :

e1

Terminal Position :

Single

Packaging :

Tube

Package / Case :

TO-264-3, TO-264AA

Voltage - Rated DC :

500V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.065Ohm

Mounting Type :

Through Hole

Power Dissipation :

694W

Avalanche Energy Rating (Eas) :

3000 mJ

Series :

POWER MOS 7®

Pin Count :

3

Factory Lead Time :

23 Weeks

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

65m Ω @ 33.5A, 10V

Continuous Drain Current (ID) :

67A

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

268A

Transistor Application :

SWITCHING

Fall Time (Typ) :

30 ns

Power Dissipation-Max :

694W Tc

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Current Rating :

67A

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

7010pF @ 25V

Rise Time :

28ns

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 2.5mA