APT50M65LFLLG
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- Mfr.Part #
- APT50M65LFLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 67A TO264
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- TIN SILVER COPPER
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Pulsed Drain Current-Max (IDM) :
- 268A
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 141nC @ 10V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Published :
- 1997
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 28ns
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 33.5A, 10V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 29 ns
- Series :
- POWER MOS 7®
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 7010pF @ 25V
- Power Dissipation-Max :
- 694W Tc
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation :
- 694W
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 67A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 67A
- Drain-source On Resistance-Max :
- 0.065Ohm
- Fall Time (Typ) :
- 30 ns
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Packaging :
- Tube
- Turn On Delay Time :
- 12 ns
- Datasheets
- APT50M65LFLLG
N-Channel Tube 65m Ω @ 33.5A, 10V ±30V 7010pF @ 25V 141nC @ 10V TO-264-3, TO-264AA
APT50M65LFLLG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 7010pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 67A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 29 ns.Its maximum pulsed drain current is 268A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT50M65LFLLG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 67A
the turn-off delay time is 29 ns
based on its rated peak drain current 268A.
APT50M65LFLLG Applications
There are a lot of Microsemi Corporation
APT50M65LFLLG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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