APT50M65B2LLG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

694W Tc

Rise Time :

28ns

Package / Case :

TO-247-3 Variant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

29 ns

Mount :

Through Hole

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

268A

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

JESD-609 Code :

e1

Series :

POWER MOS 7®

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds :

7010pF @ 25V

Terminal Position :

Single

Fall Time (Typ) :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

67A

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Power Dissipation :

694W

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Packaging :

Tube

Number of Terminations :

3

Number of Elements :

1

Continuous Drain Current (ID) :

67A

Pin Count :

3

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.065Ohm

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

65m Ω @ 33.5A, 10V

Voltage - Rated DC :

500V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Number of Pins :

3