APT5025BN

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

250m Ω @ 11.5A, 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Published :

1997

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

FET Type :

N-Channel

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Series :

POWER MOS IV®

Drain to Source Voltage (Vdss) :

500V

JEDEC-95 Code :

TO-247AD

Surface Mount :

No

Drain-source On Resistance-Max :

0.25Ohm

Terminal Position :

Single

Package / Case :

TO-247-3

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

310W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

92A