APT5024BLLG
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- Mfr.Part #
- APT5024BLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO247
- Stock
- 31,341
- In Stock ：
- 31,341
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 960 mJ
- Published :
- 1997
- Package / Case :
- TO-247-3
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Series :
- POWER MOS 7®
- Drain-source On Resistance-Max :
- 0.24Ohm
- Factory Lead Time :
- 19 Weeks
- Turn On Delay Time :
- 8 ns
- Fall Time (Typ) :
- 2 ns
- JEDEC-95 Code :
- TO-247AD
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 265W
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Voltage - Rated DC :
- 500V
- Power Dissipation-Max :
- 265W Tc
- Packaging :
- Tube
- FET Type :
- N-Channel
- Current Rating :
- 22A
- Continuous Drain Current (ID) :
- 22A
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 88A
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Rise Time :
- 6ns
- Turn-Off Delay Time :
- 18 ns
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 11A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- APT5024BLLG
N-Channel Tube 240m Ω @ 11A, 10V ±30V 1900pF @ 25V 43nC @ 10V TO-247-3
APT5024BLLG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 960 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 18 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 88A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT5024BLLG Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 22A
the turn-off delay time is 18 ns
based on its rated peak drain current 88A.
APT5024BLLG Applications
There are a lot of Microsemi Corporation
APT5024BLLG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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