APT5022BNG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Factory Lead Time :

21 Weeks

Vgs(th) (Max) @ Id :

4V @ 1mA

Surface Mount :

yes

Series :

POWER MOS IV®

Case Connection :

DRAIN

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

220m Ω @ 13.5A, 10V

Package / Case :

TO-247-3

Turn On Time-Max (ton) :

124ns

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Terminations :

3

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

27A

JESD-30 Code :

R-PSFM-G3

Turn Off Time-Max (toff) :

237ns

Feedback Cap-Max (Crss) :

350 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

360W Tc

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Drain-source On Resistance-Max :

0.22Ohm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

108A