APT5020BN

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

POWER MOS IV®

JEDEC-95 Code :

TO-247AD

Number of Terminations :

3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

112A

Drain to Source Voltage (Vdss) :

500V

Feedback Cap-Max (Crss) :

350 pF

FET Type :

N-Channel

Mounting Type :

Through Hole

Turn Off Time-Max (toff) :

237ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Published :

1997

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

500V

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

360W Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Package / Case :

TO-247-3

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain Current-Max (Abs) (ID) :

28A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Rds On (Max) @ Id, Vgs :

200m Ω @ 14A, 10V

Drain-source On Resistance-Max :

0.2Ohm

Turn On Time-Max (ton) :

124ns

JESD-609 Code :

e0

Transistor Element Material :

SILICON