APT5014SLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Current Rating :

35A

Mount :

Surface Mount

Turn-Off Delay Time :

23 ns

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

24 Weeks

Lead Free :

Lead Free

Terminal Finish :

PURE MATTE TIN

Terminal Form :

Gull wing

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Continuous Drain Current (ID) :

35A

Published :

1997

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

35A Tc

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Number of Pins :

3

Power Dissipation :

403W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

403W Tc

Pin Count :

3/2

Voltage - Rated DC :

500V

Input Capacitance (Ciss) (Max) @ Vds :

3261pF @ 25V

Vgs (Max) :

±30V

Rise Time :

6ns

Number of Terminations :

2

Fall Time (Typ) :

3 ns

Series :

POWER MOS 7®

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

140m Ω @ 17.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

245

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V