APT5014BLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

140m Ω @ 17.5A, 10V

Rise Time :

6ns

Packaging :

Tube

Width :

16.26mm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3261pF @ 25V

Fall Time (Typ) :

3 ns

Mount :

Through Hole

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

JESD-609 Code :

e1

Factory Lead Time :

23 Weeks

Number of Elements :

1

Height :

5.31mm

Turn On Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Published :

1997

Mounting Type :

Through Hole

Power Dissipation :

403W

Length :

21.46mm

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

500V

Series :

POWER MOS 7®

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

35A

Pin Count :

3

Contact Plating :

Tin

Radiation Hardening :

No

Package / Case :

TO-247-3

Current Rating :

35A

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AD

Vgs (Max) :

±30V

Turn-Off Delay Time :

23 ns

Power Dissipation-Max :

403W Tc

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Weight :

38.000013g

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 1mA