APT40GP90B2DQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

RoHS Status :

RoHS Compliant

Turn On Time :

37 ns

Switching Energy :

795μJ (off)

Series :

POWER MOS 7®

Terminal Finish :

TIN SILVER COPPER

Packaging :

Tube

IGBT Type :

PT

Number of Terminations :

3

Package / Case :

TO-247-3 Variant

Max Power Dissipation :

543W

Current - Collector Pulsed (Icm) :

160A

Radiation Hardening :

No

JESD-609 Code :

e1

Mounting Type :

Through Hole

Pbfree Code :

yes

Number of Pins :

3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Current Rating :

101A

Collector Emitter Breakdown Voltage :

900V

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 40A

Voltage - Rated DC :

900V

Test Condition :

600V, 40A, 4.3 Ω, 15V

Input Type :

Standard

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

14ns/90ns

Turn Off Time-Nom (toff) :

220 ns

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Thr Voltage-Max :

6V

Lifecycle Status :

NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 1 month ago)

Number of Elements :

1

Lead Free :

Lead Free

Max Collector Current :

101A

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

900V

Additional Feature :

LOW CONDUCTION LOSS

Mount :

Through Hole

Gate Charge :

145nC

Published :

1999

Case Connection :

COLLECTOR

Factory Lead Time :

30 Weeks