APT4065BNG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.65Ohm

Turn On Time-Max (ton) :

52ns

Pulsed Drain Current-Max (IDM) :

44A

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-G3

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Series :

POWER MOS IV®

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

DS Breakdown Voltage-Min :

400V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.5A, 10V

Number of Elements :

1

Turn Off Time-Max (toff) :

75ns

Number of Terminations :

3

Case Connection :

DRAIN

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

115 pF

Qualification Status :

Not Qualified

Power Dissipation-Max :

180W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

400V

Drain Current-Max (Abs) (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pin Count :

3

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V