55GN01FA-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

3000MHz

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Breakdown Voltage :

10V

Number of Pins :

3

Configuration :

Single

Collector Base Voltage (VCBO) :

20V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

10V

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Bismuth (Sn/Bi)

JESD-609 Code :

e6

Number of Elements :

1

Frequency - Transition :

4.5GHz~5.5GHz

Gain :

11dB ~ 19dB @ 1GHz ~ 400MHz

Factory Lead Time :

7 Weeks

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Max Collector Current :

70mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Frequency :

5.5GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Halogen Free :

Halogen Free

Published :

2012

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Surface Mount :

yes

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Power Dissipation :

250mW

Package / Case :

SC-81

Lead Free :

Lead Free