2SC5551AF-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

30V

Number of Pins :

3

Operating Temperature :

150°C TJ

Max Collector Current :

300mA

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Pin Count :

3

Max Breakdown Voltage :

30V

Continuous Collector Current :

300mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

135 @ 50mA 5V

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

2V

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Max Power Dissipation :

1.3W

Published :

2009

Element Configuration :

Single

Number of Elements :

1

Lead Free :

Lead Free

Length :

4.5mm

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Highest Frequency Band :

S B

Surface Mount :

yes

Max Frequency :

3.5GHz

Transistor Type :

NPN

Height :

1.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Collector-Base Capacitance-Max :

4pF

JESD-609 Code :

e6

Package / Case :

TO-243AA

Width :

2.5mm

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

30V

Power Dissipation :

1.3W

Transition Frequency :

3500MHz

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

300mV