2SC5551AE-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Pins :

3

Published :

2009

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e6

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

30V

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Terminal Form :

Flat

Max Power Dissipation :

1.3W

Polarity/Channel Type :

NPN

Package / Case :

TO-243AA

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

300mV

Pin Count :

3

Mounting Type :

Surface Mount

Gain Bandwidth Product :

3.5 GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA 5V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

2V

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

3500MHz

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Factory Lead Time :

7 Weeks

Max Collector Current :

300mA

Collector-Base Capacitance-Max :

4pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

3.5GHz

Power Dissipation :

1.3W

Transistor Type :

NPN