2SC5227A-4-TB-E
- Mfr.Part #
- 2SC5227A-4-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF TRANS NPN 10V 7GHZ 3CP
- Stock
- 6,464
- In Stock :
- 6,464
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 70mA
- Max Power Dissipation :
- 200mW
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 10V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 70mA
- Frequency :
- 7GHz
- Transition Frequency :
- 5000MHz
- Mounting Type :
- Surface Mount
- Length :
- 2.9mm
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2012
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 10V
- Gain :
- 12dB
- Collector Base Voltage (VCBO) :
- 20V
- Height :
- 1.1mm
- JESD-609 Code :
- e6
- Polarity/Channel Type :
- NPN
- Width :
- 1.5mm
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 20mA 5V
- Noise Figure (dB Typ @ f) :
- 1dB @ 1GHz
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC5227A-4-TB-E
2SC5227A-4-TB-E Documents

2SC5227A-4-TB-E datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at
2SC5227A-4-TB-E Description
2SC5227A-4-TB-E is a 10v NPN single CP RF transistor. The RF MOSFETs are metal-oxide-semiconductor field effect transistor that is designed to operate at high frequencies, typically between 100MHz and well into the GHz range. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor 2SC5227A-4-TB-E in the SOT-23-3 package with 200mW power dissipation.
2SC5227A-4-TB-E Features
Low-noise
High gain
High cut-off frequency
Collector-to-Base Voltage: 20v
Collector-to-Emitter Voltage: 10v
Collector Current: 70mA
Collector Dissipation: 200mW
2SC5227A-4-TB-E Applications
Stereo amplifiers
Radio transmitters
Television monitors
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