2SC5227A-4-TB-E

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Mfr.Part #
2SC5227A-4-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF TRANS NPN 10V 7GHZ 3CP
Stock
6,464
In Stock :
6,464

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - RF
Collector Emitter Voltage (VCEO) :
10V
Element Configuration :
Single
Height :
1.1mm
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
200mW
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Pins :
3
Collector Base Voltage (VCBO) :
20V
Transition Frequency :
5000MHz
Packaging :
Tape and Reel (TR)
Width :
1.5mm
Transistor Type :
NPN
Gain :
12dB
RoHS Status :
ROHS3 Compliant
Length :
2.9mm
JESD-609 Code :
e6
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 20mA 5V
Number of Elements :
1
Factory Lead Time :
4 Weeks
Published :
2012
Max Collector Current :
70mA
Current - Collector (Ic) (Max) :
70mA
Frequency :
7GHz
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
2V
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Pin Count :
3
Collector Emitter Breakdown Voltage :
10V
Max Power Dissipation :
200mW
Operating Temperature :
150°C TJ
Noise Figure (dB Typ @ f) :
1dB @ 1GHz
Mounting Type :
Surface Mount
Contact Plating :
Tin
Pbfree Code :
yes
Package / Case :
TO-236-3, SC-59, SOT-23-3
Datasheets
2SC5227A-4-TB-E
Introducing Transistors - Bipolar (BJT) - RF onsemi 2SC5227A-4-TB-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Gain:12dB, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SC5227A-4-TB-E pinout, 2SC5227A-4-TB-E datasheet PDF, 2SC5227A-4-TB-E amp .Beyond Transistors - Bipolar (BJT) - RF onsemi 2SC5227A-4-TB-E ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5227A-4-TB-E


2SC5227A-4-TB-E datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at

2SC5227A-4-TB-E Description


2SC5227A-4-TB-E is a 10v NPN single CP RF transistor. The RF MOSFETs are metal-oxide-semiconductor field effect transistor that is designed to operate at high frequencies, typically between 100MHz and well into the GHz range.  The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor 2SC5227A-4-TB-E in the SOT-23-3 package with 200mW power dissipation.



2SC5227A-4-TB-E Features


Low-noise

High gain

High cut-off frequency

Collector-to-Base Voltage: 20v

Collector-to-Emitter Voltage: 10v

Collector Current: 70mA

Collector Dissipation: 200mW



2SC5227A-4-TB-E Applications


Stereo amplifiers

Radio transmitters

Television monitors


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